Browsing by Author "Wanigasekara, G."

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Design and construction of low cost petri dish incubator
(Faculty of Science, University of Kelaniya, Sri Lanka, 2016) Wanigasekara, G.; Perera, N.W.; Abeysinghe, D.; Geegamage, S.S.; Wijekoon, D.; Jayathilaka, N.
Petri dish incubators are used in laboratories to keep petri dish samples at a stable and optimal temperature of 37 °C. Incubators are one of the frequently needed equipment. These incubators are expensive due to the use of complex systems. Many of the local universities do not have the necessary financial resources to purchase this equipment. Therefore, undergraduate students usually do not have access to incubators for academic learning. In order to surmount this challenge, it is necessary to look at a low cost, simple design for petri dish incubators. Hence, we have designed an incubator utilizing low cost microcontroller boards and sensors. Both microcontrollers and sensors were selected to provide adequate accuracy for the incubation at 37 °C. The incubator is constructed of three major components; sensors, controller and temperature regulation system. The incubator uses three LM35 temperature sensors to monitor the temperature with 0.5 °C accuracy and the system is controlled by Arduino Uno board with 16 MHz ATmega328P microcontroller. The microcontroller regulates the temperature of the incubation chamber utilizing 200W Nichrome heating element and two exhaust fans. Three temperature sensor readings were taken to acquire chamber temperature by averaging three values. Microcontroller uses these data to control the heating element, the fan for heating and the fan for cooling. The controller uses a PID (Proportional–Integral–Derivative) algorithm to stabilize the temperature. The sensor input wiring is highly shielded to avoid interference from the main powerline magnetic noise. The incubator body is shielded with porcelain to avoid fire hazards. The average temperature recorded by the incubator sensor and the chamber temperature as recorded with a thermometer was monitored at 2 hr intervals over a 16 hr period at 37.6 ± 0.5 °C and 37.6 ± 0.5 °C respectively indicating the accuracy of temperature regulation in the petri dish incubator over an extended period of incubation.
Effects of ZnO on inverted P3HT:PCBM bulk heterojunction solar cells
(Faculty of Science, University of Kelaniya, Sri Lanka, 2020) Wanigasekara, G.; Namawardana, D.G.K.K.; Wanninayake, W.T.M.A.P.K.,; Jayathilaka, K.M.D.C.,; Wijesundera, R.P.; Siripala, W.
Low cost, low environmental impact, ease of mass production and many more promising attributes of Organic Solar Cells (OSCs) have inspired researchers to investigate OCSs for increasing their performance and stability in a constant phase. Moreover, in the recent years, OSCs with inverted structures have gained more attention compared to the conventional configuration of the device. In this study, Indium Tin Oxide (ITO) -free inverted OSC devices were fabricated on polished Stainless Steel (SS) substrates with top illumination in order to have the device structure of SS/ZnO/P3HT:PCBM/PEDOT:PSS/Au. A thin film of Zinc Oxide (ZnO) layer was deposited on SS substrates from a solution of Zinc Acetate Dihydrate (ZnC₄H₆O₄·2H2O) using spin coating technique. The active layer was spin-coated from a bulk heterojunction polymer blend of regioregular Poly(3-hexylthiophene) (P3HT) and Phenyl-C61-butyric acid methyl ester (PCBM) on the prepared ZnO layer. On the top of the active layer, Ethylene glycol doped poly(3,4- ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was blade coated as the hole transport layer. Then the stack was annealed before Gold (Au) was sputter coated to make the top contact. The device performance was optimized by varying a number of parameters including the concentration of ZnC₄H₆O₄·2H2O solution, thickness of the ZnO layer, annealing temperature, annealing time, composition of the polymer blend and dopant material of PEDOT:PSS dispersion. Open circuit voltage (Voc) and short circuit current (Jsc) of the devices increased after applying ZnO layer. The thermal annealing improved the fill factor (FF) of the devices. Spectral response measurements reveal that photon energies higher than 1.77 eV are absorbed by the device and photogenerated electron-hole pairs are produced. The best OSC device exhibited Voc of 440 mV with the Jsc of 6.2 mA/cm2 , fill factor (FF) of 30% and maximum power conversion efficiency of 0.05%.
Fabrication of inverted polymer based organic solar cells on stainless steel substrate
(Faculty of Science, University of Kelaniya, Sri Lanka, 2020) Namawardana, D.G.K.K.; Wanigasekara, G.; Wanninayake, W.T.M.A.P.K.; Jayathilaka, K.M.D.C.; Wijesundera, R.P.; Siripala, W.
In the past years, polymer based organic solar cells (OSCs) have become a widely researched topic as a potential candidate for producing clean and renewable energy due to their lightweight, high mechanical flexibility, and large-area processability. As an alternative for the conventional device structure, in this study, OSC devices with an inverted structure were fabricated and characterized under the top illumination. Regioregular poly (3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) were used as the electron donor and electron acceptor material respectively for the device fabrication with structure of SS/P3HT:PCBM/PEDOT:PSS/Au. On pre-cleaned stainless steel (SS) substrates, bulk heterojunction polymer blend was spin coated from chlorobenzene solution (20 mg/mL) with a 1:1 weight ratio of P3HT: PCBM and then it was thermally annealed. As a hole-transport-layer (HTL), a thin film of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) doped with ethylene glycol (10 wt.%) was blade coated on the active layer and the stack was annealed at 120ºC for 10 minutes. As the top contact of the device, gold (Au) was sputter coated. Performances of the fabricated OSC devices were optimized by varying several discrete parameters including the spin rate of the active layer formation, annealing temperature and the annealing time of the active layer. The optimum conditions for the device fabrication with the best performance were at the spin rate of 3000 rev./min for the active layer formation whereas optimum annealing temperature and annealing time were 160ºC and 60 minutes, respectively. The best device produced had an open-circuit voltage (Voc) of 238 mV and a short-circuit current density (Jsc) of 4.36 mAcm-2 . A maximum power conversion efficiency (PCE) of 0.02% with a fill factor (FF) of 23.16% was obtained under 1 sun illumination (AM 1.5G, 1000 Wm-2 ). The spectral response measurements of the fabricated cell indicate that it absorbs photons with energy higher than 1.77 eV to generate electron-hole pairs. It is planned to fabricate a thin film of Zinc Oxide (ZnO) as a potential electron transport layer (ETL) on SS substrate to improve the FF and PCE of the device.