Physics

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Author: search.filters.author.Siripala, W.Subject: search.filters.subject.Fabrication

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    Growth and Characterisation of CuInS2 Thin Films
    (1999) Wijesundera, R.P.; Siripala, W.; Jayasuriya, K.D.; Kalingamudali, S.R.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.; Samantilleke, A.P.; Dharmadasa, I.M.
    Copper Indium Disulphide thin films were grown by electrodeposition of Cu-ln alloy followed by sulphurisation in H2S gas. It was observed that the ionic concentration of Cu2+/ In3+ in the electrodepositing bath determines the composition of the materials formed after the sulphurisation. CuInS2 thin films having the chalcopyrite crystal structure can be produced using this technique and the films are n-type semiconductors.
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    Fabrication and Characterisation of CuinS2/ZnSe/Metal Structures for Solar Cell Applications
    (2000) Kalingamudali, S.R.D.; Wijesundera, R.P.; Gunatunga, N.P.; Siripala, W.; Jayasuriya, K.D.; de Silva, K.T.L.; Jayanetti, J.K.D.S.
    Thin film solar cell structure of Ti/CuInS2/ZnSe/Metal was fabricated using simple electrochemical and sulphurisation techniques. Copper lndium Disulphide (CuInS2 thin films were prepared by sulphurisation of Cu-In alloy on Ti substrates. Films were characterised usrng X-ray diffraction (XRD)1 scanning electron microscopy (SEM), spectral response and t-V measurements. XRD measurements snowed the characteristic peaks of CulnSz and SEM showed that the crystallites are of the size 1-3 J.1m. ZnSe thin fitms were deposited on Ti/CuInS2 using electrodeposition technique, TiCuInS2/ZnSe/Metal structures were characterised using C-V, I-V and spectral response measurements. Light and dark I-V measurements revealed the phctovoltaic activity of the structure while the C-V measurements confirmed the formatlon of the heterojunction. Spectral response showed that the photocarriers are generated by the absorption of light in the CuJnS2 tayer.