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Item Optimization of growth parameters of photoactive Cu2ZnSnS4.(International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.Cu2ZnSnS4 (CZTS) is a promising candidate for application in low-cost and environmentally friendly thin film solar cells due to its optoelectronics properties. It is a perfect absorber material for photovoltaic applications due to its high absorption coefficient (>10-4 cm-1) and direct optical band gap (1.4 - 1.5 eV). Among the CZTS preparation techniques, electrodeposition of Cu, Sn and Zn stack layers followed by sulphurisation in H2S is an attractive technique because of its simplicity, low cost and easy to control stoichiometry. In this investigation, optimization of growth parameters in order to obtain photoactive CZTS thin films by sulphurisation of electrodeposited Cu, Sn and Zn stack layers has been investigated. Cu thin film was electrodeposited on Mo substrate at –0.89 V Vs Ag/AgCl electrode in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH 11. Deposition of Sn thin film on Mo/Cu electrode was carried out at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.055 M, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.2 M ZnSO4. Deposition parameters of Cu, Sn and Zn have been obtained by voltammograms. In order to grow CZTS, Mo/Cu/Sn/Zn thin film electrodes were annealed at 550 oC for 60 min in H2S. Sulphurisation process was carried out at different temperatures and durations using set of identical Mo/Cu/Sn/Zn thin film electrodes and thereby optimized temperature and duration of the sulpurisation. Atomic ratios of initial Cu, Sn and Zn layers could be crucial parameters in determining properties of CZTS thin films. Therefore, atomic ratios of Cu/Sn/Zn layers were optimized by changing Cu, Sn and Zn deposition duration. Various combinations of deposition durations were carried out and optimized by monitoring the dark and light I-V measurements in a PEC containing 0.1 M sodium acetate. Dark and light I-V characteristics revealed that the best photoactive CZTS films can be grown by depositing Cu for 20 min, Sn for 10 sec and Zn for 10 sec. Results further showed that photoconductivity of CZTS thin films is p-type. It is evident from reflectance measurements that the band gap of the CZTS films is 1.5 eV. In conclusion, it is found that the highest photoactive p-CZTS thin films can be grown by sulphurisation of electrodeposited Cu, Sn and Zn stack layers on Mo substrate using H2S at 550 oC for 60 min. Cu: Sn: Zn ratios of the stack layers are the crucial parameters in determining photoactive CZTS thin films. The methodology developed in this study will be further investigated in order to develop the materials for wider applications.Item Photoelectrolysis of water using electrodeposited Cu2O electrodes.(International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Silva, A. G. T. D.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.At present, fossil fuels are the main energy contributor of the world’s energy needs but gradually depletion of fossil fuels is heading towards an energy crisis. Therefore it is very important for us to find out a renewable clean energy source to minimize the use of fossil fuels and environmental problems created by the burning fossil fuels. Among the suggested alternative fuels, hydrogen is one of the best and it can be produced by photoelectrolysis of water. Finding correct semiconducting materials and techniques are the key areas of research in the development of an efficient photoelectrolysis device. Ultra low cost electrodeposited cuprous oxide (Cu2O) is a good candidate material because it has required semiconductor properties for the process. p-Cu2O electrode electrolyte system requires external bias to produce photocurrent and this can be overcome by using n-Cu2O. However, in our previous studies, we have observed the possibility of enhancement of photocurrent at zero bias using double electrode system (electrodeposted n-Cu2O, thermally grown p-Cu2O, electrolyte system). In this investigation it was studied the possibility of photoelectrolysis of water using electrodeposited n- and p-Cu2O thin film electrodes as a double photoelectrode system in a 0.1 M sodium acetate photoelectrochemcal cell. n-Cu2O thin films on Ti substrates were potentiostatically electrodeposited at −200 mV Vs Ag/AgCl for 60 minutes in an aqueous solution containing 0.1 M sodium acetate and 0.01 M cupric acetate. The initial pH of the deposition bath was adjusted to 6.1. The temperature of the electrolyte was maintained at 55 °C and counter and reference electrodes were a platinum plate and a Ag/AgCl electrode, respectively. p-Cu2O thin films were electrodeposited on Ti substrate at -400 mV Vs Ag/AgCl for 40 min in a three-electrode electrochemical cell containing a 3 M sodium lactate and 0.4 M CuSO4 solution at pH 11. During the electrodeposition, the baths were continuously stirred using a magnetic stirrer. Prior to the film deposition, substrates were cleaned with detergent, dilute HCl, distilled water, and finally ultrasonicated in distilled water. Electrolytic solutions were prepared with distilled water and reagent-grade chemicals. n-Cu2O thin films are annealed at 150 oC for 10 min in air. Possibility of photoelectolysis using electrodeposited Cu2O has been investigated using dark and light current–voltage measurements in a three-electrode electrochemical cell containing 0.1 M aqueous sodium acetate solution. Results reveal that photoelectrolysis process is enhanced by 380% when n- and p-Cu2O double electrode system was operated compared to the n-Cu2O single electrode system.