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Item Growth of photoactive Cu2ZnSnS4 by single step electrodeposition(Research Symposium on Pure and Applied Sciences, 2018 Faculty of Science, University of Kelaniya, Sri Lanka, 2018) Fernando, W. T. R. S.; Jayathileka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.Cu2ZnSnS4 (CZTS) is a promising candidate for application in low-cost and environmentally-friendly thin film solar cells due to its optoelectronics properties. It is a perfect absorber material for photovoltaic applications due to its high absorption coefficient (>10-4 cm-1) and direct optical bandgap (1.4 - 1.5 eV). Among the CZTS preparation techniques, single step electrodeposition is an attractive because of its simplicity, low cost and easy to control stoichiometry. In this study, CZTS thin films on Mo substrate were potentiostatically electrodeposited in a three electrode electrochemical cell containing 0.02 M copper (II) sulfate pentahydrate (CuSO4·5H2O), 0.01 M zinc sulfate heptahydrate (ZnSO4·7H2O), 0.02 M tin sulfate (SnSO4) and 0.02 M sodium thiosulfate (Na2S2O3) at room temperature. 0.2 M tri-sodium citrate (C6H5Na3O7:Na3-citrate) was used as complexing agent and tartaric acid (C4H6O6) was used as pH control solution. pH of the bath was maintained at 5.0 Ag/AgCl and platinum electrodes were used as reference and counter electrodes respectively. Mo substrate with a deposition area of 1×2 cm2 was used as the working electrode. Electrodeposition was carried out at -1.05 V vs Ag/AgCl using a Hokuto Denko model HZ-5000 Potentiostat/Galvanostat. CZTS samples were prepared using different deposition durations (5, 10, 15, 20, 25, 30, 35, 40, 45, 50, 55 min). Optimum bath conditions were explored using cyclic voltammetry. Samples were characterized using XRD, optical absorption, dark and light I-V measurements and spectral response measurements in a PEC containing 0.1 M sodium acetate. XRD measurements evidenced that the formation of single phase polycrystalline CZTS. Reflectance measurements has revealed that the band gap energy of the films is 1.5 eV and I-V measurements revealed that CZTS thin films were photoactive and p-type. To enhance the photoactive properties films were annealed at different temperatures (500, 550, 6000C) and durations (15, 30, 45 min) in H2S surrounding. As the results, photoactive performance of the films enhance with the annealing treatment in H2S. In conclusion, it can be mentioned that the highest photoactive p-CZTS thin films can be grown by annealing the 40 min deposited samples at 5500C for 30 min in H2S. The methodology developed in this study will be further investigated, in order to develop the material for wider applications.Item Optimization of growth parameters of photoactive Cu2ZnSnS4.(International Research Symposium on Pure and Applied Sciences, 2017 Faculty of Science, University of Kelaniya, Sri Lanka., 2017) Fernando, W. T. R. S.; Jayathilaka, K. M. D. C.; Wijesundera, R. P.; Siripala, W.Cu2ZnSnS4 (CZTS) is a promising candidate for application in low-cost and environmentally friendly thin film solar cells due to its optoelectronics properties. It is a perfect absorber material for photovoltaic applications due to its high absorption coefficient (>10-4 cm-1) and direct optical band gap (1.4 - 1.5 eV). Among the CZTS preparation techniques, electrodeposition of Cu, Sn and Zn stack layers followed by sulphurisation in H2S is an attractive technique because of its simplicity, low cost and easy to control stoichiometry. In this investigation, optimization of growth parameters in order to obtain photoactive CZTS thin films by sulphurisation of electrodeposited Cu, Sn and Zn stack layers has been investigated. Cu thin film was electrodeposited on Mo substrate at –0.89 V Vs Ag/AgCl electrode in an electrochemical cell containing 0.4 M CuSO4, 3 M lactic acid and NaOH at pH 11. Deposition of Sn thin film on Mo/Cu electrode was carried out at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.055 M, 2.25 M NaOH and 8 ml of sorbitol. Zn thin film was electrodeposited on Mo/Cu/Sn at -1.2 V Vs Ag/AgCl in an electrochemical cell containing 0.2 M ZnSO4. Deposition parameters of Cu, Sn and Zn have been obtained by voltammograms. In order to grow CZTS, Mo/Cu/Sn/Zn thin film electrodes were annealed at 550 oC for 60 min in H2S. Sulphurisation process was carried out at different temperatures and durations using set of identical Mo/Cu/Sn/Zn thin film electrodes and thereby optimized temperature and duration of the sulpurisation. Atomic ratios of initial Cu, Sn and Zn layers could be crucial parameters in determining properties of CZTS thin films. Therefore, atomic ratios of Cu/Sn/Zn layers were optimized by changing Cu, Sn and Zn deposition duration. Various combinations of deposition durations were carried out and optimized by monitoring the dark and light I-V measurements in a PEC containing 0.1 M sodium acetate. Dark and light I-V characteristics revealed that the best photoactive CZTS films can be grown by depositing Cu for 20 min, Sn for 10 sec and Zn for 10 sec. Results further showed that photoconductivity of CZTS thin films is p-type. It is evident from reflectance measurements that the band gap of the CZTS films is 1.5 eV. In conclusion, it is found that the highest photoactive p-CZTS thin films can be grown by sulphurisation of electrodeposited Cu, Sn and Zn stack layers on Mo substrate using H2S at 550 oC for 60 min. Cu: Sn: Zn ratios of the stack layers are the crucial parameters in determining photoactive CZTS thin films. The methodology developed in this study will be further investigated in order to develop the materials for wider applications.