Symposia and Conferences

Permanent URI for this communityhttp://repository.kln.ac.lk/handle/123456789/151

Browse

Author: search.filters.author.Atapattu, H.Y.R.

Search Results

Now showing 1 - 3 of 3
  • Thumbnail Image
    Item
    Effect of Concentration of Cd2+ on the Material Properties of CdTe Thin Films Electrodeposited via a Two Electrode Electrolytic Cell
    (Faculty of Graduate Studies, University of Kelaniya, Sri Lanka, 2016) Wedisinghe, K.C.; Atapattu, H.Y.R.; de Silva, D.S.M.
    Cadmium telluride (CdTe) is a vital semiconductor material which can absorb most of the electromagnetic radiation of solar energy spectrum to yield more efficient solar cells. Among the thin film fabrication methods, electrodeposition is an emerging technique to produce good quality CdTe materials using either two or three electrode system. This study was performed using the two electrode electrolytic system to investigate the effect of Cd2+ concentration on the material properties of CdTe thin films to enhance its photovoltaic activities. Electrodepositions of CdTe were carried out in an aqueous electrolyte which was prepared utilizing analytical grade CdSO4 as the cadmium and TeO2 as the tellurium precursors. Fluorine doped tin oxide coated conducting glass (1×3 cm2) and high purity carbon electrode were used as the working (cathode) and counter electrodes (anode) respectively in the electrolytic cell used for the depositions. The concentration of TeO2 was maintained around 1 mmol/L throughout while varying the CdSO4 concentration from 1.00 mol/L to 1.50 mol/L. pH of the electrolyte was initially adjusted to 2.2 and depositions were carried out in the cathodic potential range of (1.33 - 1.37) V at 65 °C while stirring at continuous stirring rate of 60 rpm. The resulting electrodeposited CdTe layers were heat treated for 10 minutes at 400 °C in air and subsequently, their optical, electrical morphological and structural properties were studied using UV-visible spectrophotometry, photo-electrochemical cell, scanning electron microscopy and X-ray diffraction spectroscopy. As elucidated by the results, at the deposition potentials of 1.34 V and 1.35 V, the short circuit current and open circuit voltage values were increased with the increasing of concentration of Cd2+ from 1.00 mol/L to 1.25 mol/L while the band gap energy reached to its theoretical value of 1.50 eV.
  • Thumbnail Image
    Item
    Effect of Thermal Annealing on Electrodeposited CdS and CdS/CdTe Heterojunction
    (Faculty of Graduate Studies, University of Kelaniya, Sri Lanka, 2016) Atapattu, H.Y.R.; de Silva, D.S.M.; Pathiratne, K.A.S.
    At present CdS/CdTe based solar cells have a significant commercial impression due to its lowcost, scalability, manufacturability and simplicity. Nevertheless, it is essential to elevate the optoelectronic qualities of CdS and CdTe materials and the interface properties of CdS/CdTe heterojunction and ultimately the efficiency of the solar cells. In this regard thermal annealing is one of the key steps to be considered in order to enhance the material and heterojunction properties. Hence, in this study, the effect of thermal annealing on electrodeposited CdS and CdS/CdTe heterojunction was investigated. CdS and CdTe semiconductor layers were potentiostatically electrodeposited on bare fluorine doped tin oxide (FTO) glass substrates and FTO/CdS respectively using the typical three electrode electrolytic cell. For both layers, saturated calomel electrode and high purity (99%) graphite rod were used as reference and counter electrodes respectively. 0.10 mol/L CdCl2 and 0.01 mol/L Na2S2O3 were used as Cd and S precursors respectively to produce CdS thin films while 1.35 mol/L CdSO4 and 1.0 mmol/L TeO2 were used as Cd and Te precursors respectively for CdTe. CdS layers were grown at cathodic deposition potential of 660 mV at pH 1.6 and temperature of 55 °C. Afterwards, one set of electrodeposited CdS samples was conveyed for fabrication of CdS/CdTe heterojunction. CdTe layers were grown on CdS layers at cathodic deposition potential of 650 mV at pH 2.3 and temperature of 65 °C. Subsequently, thermal annealing was carried out for both CdS and CdS/CdTe at three different temperatures; 390, 400 and 410 °C, for each annealing three different time periods; 10, 15, 20 min were considered. After the process of annealing all the samples were inspected for their optical, electrical and morphological properties using the techniques of optical absorption spectroscopy, photoelectrochemical cell and scanning electron microscopy respectively. According to the results, the optimum annealing conditions which yielded good optoelectronic qualities for CdS and CdS/CdTe were found to be 400 °C, 15 min and 390 °C, 15 min respectively.
  • Thumbnail Image
    Item
    Optimization of three growth parameters for electrodeposition of CdS thin film semiconductor; pH, deposition temperature and deposition voltage in a stable electrolyte
    (Faculty of Graduate Studies, University of Kelaniya, 2015) Atapattu, H.Y.R.; De Silva, D.S.M.; Pathiratne, K.A.S.
    Cadmium sulfide has been identified as the most promising window material for fabrication of CdS/CdTe and CdS/CuInGaSe2 thin film solar cells. Among vast variety of commercially available CdS fabrication methods electrodeposition (ED) is a viable technique due to its low cost and simplicity. This study focuses a procedure followed for optimization of the three growth parameters; pH of the bath solution, deposition temperature and deposition voltage for ED-CdS thin films with high photovoltaic activities utilizing CdCl2 and Na2S2O3 as cadmium and sulfur precursors respectively. Based on the two initial leading experiments, feasible pH and deposition temperature ranges for a stable electrolyte which does not promote chemical bath formation of CdS were identified to be in the ranges of 1.5-2.0 and 50-70 °C respectively. Also, using cyclic voltammetry the feasible cathodic deposition voltage was identified to be in the range of 640- 720 mV with respect to saturated calomel electrode. Consequently, the technique of the design of experiment (DOE) was carried out to establish random combinations of levels of the three electrodeposition parameters amid the previously identified parameter ranges for deposition of CdS layers via the ED technique. Finally, the electrical, optical, structural and morphological properties of the CdS thin films electrodeposited under different combinations of parameter values were investigated using photo-electrochemical cell study, optical absorption spectroscopy, x-ray diffraction method and scanning electron microscopy respectively. The results indicated that, aqueous solutions in the pH range of 1.6 to 1.8 containing 0.10 M CdCl2 and 0.01 M Na2S2O3 at 55-65 °C can successfully be used for electrodeposition of thin film CdS semiconductor materials over a cathodic deposition voltage range of 650 to 680 mV with a deposition period of 20 to 40 min.