High efficient multi-junction photovoltaic cell based on indium-phosphide-Oxide, indium-gallium-arsenide and indium-gallium-antimony

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dc.contributor.authorAbdulla-Al-Galib, M.en_US
dc.contributor.authorBarua, S.en_US
dc.contributor.authorSalam, K.M.A.en_US
dc.contributor.authorAwal, M.A.en_US
dc.contributor.authorWijesundera, R.P.en_US
dc.date.accessioned2014-11-19T04:46:37Z
dc.date.available2014-11-19T04:46:37Z
dc.date.issued2011
dc.identifier.citationMir Abdulla-Al-Galib, Soumen Barua, K. M. A. Salam, Mohammad A. Awal, R. P. Wijesundera, 2011, High Efficient Multi-junction Photovoltaic Cell based on Indium-Phosphide-Oxide, Indium-Gallium-Arsenide and Indium-Gallium-Antimony, International Conference on Advances in Electrical Engineering (ICAEE-2011), Dhaka, Bangladesh, 19-21 December
dc.identifier.departmentPhysicsen_US
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4134
dc.publisherInternational Conference on Advances in Electrical Engineering (ICAEE-2011en_US
dc.subjectPhotovoltaic cellsen_US
dc.subjectSri Lanka; Phosphides; Indium; Single-junction; multi-junction; Anti-reflectve coatingen_US
dc.titleHigh efficient multi-junction photovoltaic cell based on indium-phosphide-Oxide, indium-gallium-arsenide and indium-gallium-antimony
dc.typearticleen_US

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