Photovolatic properties of Cu2O/CuxS heterojunction

Abstract

A simple electrochemical method was developed to fabricate a Cu2O/CuxS heterojunction and it was then used in preparing a thin film photovoltaic soar cell. Cu2O was prepared by the method of electrodeposition and CuxS was coated on Cu2O by a simple dipping method. The photovoltaic properties of the cell could be improved significantly by heat treatment in air. The maximum conversion efficiency of the cell was 0.1% and V oc = 180mV and I sc = 2.0mA/cm2 under A M 1 artificial illumination.