Photovolatic properties of Cu2O/CuxS heterojunction

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dc.contributor.authorSiripala Wen_US
dc.contributor.authorKumara K Pen_US
dc.date.accessioned2014-11-19T04:45:47Z
dc.date.available2014-11-19T04:45:47Z
dc.date.issued1990
dc.description.abstractA simple electrochemical method was developed to fabricate a Cu2O/CuxS heterojunction and it was then used in preparing a thin film photovoltaic soar cell. Cu2O was prepared by the method of electrodeposition and CuxS was coated on Cu2O by a simple dipping method. The photovoltaic properties of the cell could be improved significantly by heat treatment in air. The maximum conversion efficiency of the cell was 0.1% and V oc = 180mV and I sc = 2.0mA/cm2 under A M 1 artificial illumination.en_US
dc.identifier.departmentPhysicsen_US
dc.identifier.urihttp://repository.kln.ac.lk/handle/123456789/4080
dc.publisherJournal of the National Science Council, Sri Lankaen_US
dc.subjectp-n diodeen_US
dc.subjectsolar cellen_US
dc.subjectphotoresponseen_US
dc.titlePhotovolatic properties of Cu2O/CuxS heterojunction
dc.typearticleen_US

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